Bhargav Pandya

Lead Principal Engineer, Gan Device Concepts & Technology Development at Infineon

Bhargav Pandya is a highly experienced engineer specializing in GaN device concepts and technology development, currently serving as Lead Principal Engineer at Infineon Technologies since May 2011. With a progression of roles from Device Engineer to Lead Principal Engineer, Bhargav has developed significant expertise in GaN device development throughout a decade-long career at Infineon. Prior to this, Bhargav gained practical experience as an RF Engineer at AKON, Inc., where testing of RF amplifiers and other components was conducted. Bhargav holds a Master of Science in Electrical Engineering from San José State University and a Bachelor of Engineering in Electronics and Communication Engineering from Gujarat University.

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Infineon

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Infineon makes life easier, safer and greener – with technology that achieves more, consumes less and is accessible to everyone.


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Headquarters

Neubiberg, Germany

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10,000+

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