TeraDiode, Inc.
Dr. Robin H. has extensive work experience in the field of high power diode lasers and semiconductor devices. From 2000 to 2009, they worked as a Member of the Technical Staff at MIT Lincoln Laboratory, focusing on these areas. In 2009, they co-founded TeraDiode, Inc. and currently holds the position of Vice President. In this role, they manage Department of Defense and government programs, and is involved in new innovations within the company.
Robin H. pursued higher education in the field of applied physics and electrical engineering. They started their academic journey at the Massachusetts Institute of Technology (MIT) in 1991, where they completed a Bachelor of Science (S.B.) degree in Physics with Electrical Engineering in 1995. Following this, they joined Stanford University in 1995 for further studies. At Stanford, they obtained a Master of Science (M.S.) degree in Electrical Engineering by 1997. Robin H. continued their pursuit of knowledge at Stanford and earned a Doctor of Philosophy (PhD) degree in Applied Physics by 2000.
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TeraDiode, Inc.
TeraDiode is leading a disruptive change in the High Power Laser market by introducing the first Direct Diode Laser with a beam quality that matches the most demanding applications in cutting and welding. With low power consumption and the highest product efficiency our lasers are also the least costly to manufacture and enable new applications in new markets. Our long term vision is to provide an alternative source for our customer base and to provide lasers in differentiated wavelength bands and with photonic capabilities to enable new market applications.